DocumentCode

1024481

Title

The influence of oxidation and high temperature treatment on MOS device characteristics

Author

Zaininger, K.H.

Volume

12

Issue

9

fYear

1965

fDate

9/1/1965 12:00:00 AM

Firstpage

504

Lastpage

505

Keywords

Annealing; Equations; Laboratories; MOS devices; Oxidation; Silicon; Surface contamination; Surface treatment; Temperature; Water pollution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1965.15557

Filename

1474021