• DocumentCode
    1024589
  • Title

    InP/InGaAs double heterostructure bipolar transistors grown by MBE

  • Author

    Schuitemaker, P. ; Claxton, P.A. ; Roberts, Jeffrey S. ; Plant, T.K. ; Houston, P.A.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    22
  • Issue
    15
  • fYear
    1986
  • Firstpage
    781
  • Lastpage
    783
  • Abstract
    Double heterostructure bipolar transistors have been fabricated on InP/InGaAs MBE material. Current gains of up to 80 have been observed in the emitter-up configuration. The devices were fabricated using two diffusion techniques and selective etching to contact the base.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor technology; DH bipolar transistors; InP/InGaAs; MBE; base contact; current gain; diffusion techniques; double heterostructure bipolar transistors; emitter-up configuration; selective etching; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860536
  • Filename
    4256740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024589