Title :
Large refractive index changes in tunable-electron-density InGaAs/InAlAs quantum wells
Author :
Zucker, J.E. ; Chang, T.Y. ; Wegener, M. ; Sauer, N.J. ; Jones, K.L. ; Chemla, D.S.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Measurements of electrorefraction and electroabsorption in a multiple-quantum-well waveguide structure in which each InGaAs quantum well is provided with an individual electron reservoir are presented. External bias transfers electrons into the wells, thus quenching the absorption and producing a refractive index change at wavelengths below the bandedge which is linear in the applied voltage. It is shown that in this type of structure both the change in refractive index per applied field and the ratio of optical phase to intensity modulation can be significantly enhanced over those found in the quantum confined Stark effect.<>
Keywords :
III-V semiconductors; aluminium compounds; carrier density; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; optical waveguides; refractive index; semiconductor quantum wells; III-V semiconductor; InGaAs-InAlAs; absorption quenching; bandedge; electroabsorption; electrorefraction; external bias; individual electron reservoir; intensity modulation; large refractive index changes; multiple-quantum-well waveguide structure; optical phase; tunable-electron-density InGaAs/InAlAs quantum wells; Absorption; Electron optics; Indium gallium arsenide; Optical modulation; Optical waveguides; Quantum well devices; Refractive index; Reservoirs; Voltage; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
