An improved GaAs MESFET model for SPICE

Author

McCamant, Angus J. ; Mccormack, Gary D. ; Smith, David H.

Author_Institution

TriQuint Semicond. Inc., Beaverton, OR, USA

Volume

38

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

822

Lastpage

824

Abstract

A SPICE model for modeling GaAs MESFET devices more accurately is discussed. In particular, small-signal parameters are accurately modeled over a wide range of bias conditions. These results were achieved by modifying the model equations of H. Statz et al. (see IEEE Trans. Electron. Devices, vol.3, no.2, p.160-9, 1987) to better represent the variation of I_ds as a function of the applied voltage. The model applies over a large range of pinch-off voltages, allows size scaling of devices, and is suited for modeling R _ds changes with frequency. The Statz equations are used to represent diode characteristics and capacitive components of the model

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; semiconductor device models; GaAs; MESFET model; SPICE; Statz equations; bias conditions; capacitive components; diode characteristics; model equations; pinch-off voltages; size scaling; small-signal parameters; Electrical resistance measurement; Equations; Gallium arsenide; Integrated circuit modeling; Intrusion detection; MESFETs; Predictive models; SPICE; Scattering parameters; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.130988

Filename

130988