Title :
Measurement of fast surface state parameters by the A-C MOS conductance method
Author :
Nicollian, E.H. ; Goetzberger, A.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Admittance measurement; Capacitance measurement; Dielectric losses; Dielectric measurements; Frequency measurement; Laboratories; Pollution measurement; Silicon; Surface impedance; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15588
