DocumentCode :
1025407
Title :
Remodeling the p-n junction
Author :
Damljanovic, Dragoljub D.
Author_Institution :
Inst. of Nucl. Sci., Beograde, Yugoslavia
Volume :
9
Issue :
6
fYear :
1993
Firstpage :
35
Lastpage :
37
Abstract :
A new expression for the p-n junction that uses experimentally derived parameters that are more easily measured than those derived from theory is presented. This approach is useful when designing circuits that use diodes and transistors as diodes, such as thermometers, logarithmic amplifiers, and voltage-reference sources.<>
Keywords :
p-n junctions; semiconductor device models; diodes; experimentally derived parameters; p-n junction; Charge measurement; Circuits; Current measurement; Light emitting diodes; Microstrip; P-n junctions; Q measurement; Silicon; Temperature dependence; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/101.261890
Filename :
261890
Link To Document :
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