Field effect and Josephson junctions

The value of the Josephson current in an S-MS system, where M contains low-dimensional electron gas, can be affected noticeably by an applied voltage (field effect). This effect is directly related to the possibility of building a three-terminal device. The dependence of the current on the carrier concentration is studied. The peculiar situation When the state of lowest subband is described by the "dirty" limit whereas the higher subband represent the "clean" limit appears to be realistic. Inter-subband scattering results in a non-monotonic behavior of the current.