Title :
dv/dt Dependence in metal oxide varistors
Author :
de Cogan, D. ; Leeson, Mark S
Author_Institution :
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
Abstract :
A dv/dt dependence has been observed in metal oxide varis-tors during impulse testing. A lossy dielectric model which provides a qualitative explanation of this behaviour can also be used to account for current overshoot.
Keywords :
impulse testing; semiconductor device testing; varistors; I-V characteristics; current overshoot; dv/dt dependence; impulse testing; lossy dielectric model; metal oxide varistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860648
