Title :
Passively modelocked 832 nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3 ps pulses at 1.9 GHz repetition rate
Author :
Wilcox, K.G. ; Mihoubi, Z. ; Elsmere, Stephen ; Quarterman, Adrian ; Foreman, H.D. ; Hashimoto, Shuji ; Sudmeyer, Thomas ; Keller, Ulrich ; Tropper, A.
Author_Institution :
Sch. of Phys. & Astron., Univ. of Southampton, Southampton
Abstract :
A passively modelocked 832 nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3 ps at a repetition rate of 1.9 GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200 ps, respectively, was used to form the pulses.
Keywords :
laser mirrors; laser mode locking; optical pulse generation; optical saturable absorption; surface emitting lasers; surface recombination; bi-temporal absorption recovery characteristic; frequency 1.9 GHz; passive modelocking; repetition rate; semiconductor saturable absorber mirror; surface-recombination; time 1.5 ps; time 15.3 ps; time 200 ps; time constants; vertical-external-cavity surface-emitting semiconductor laser; wavelength 832 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20089345
