DocumentCode
1026331
Title
Flicker noise in GaAs MESFET X-band amplifiers in the temperature range 300 K to 2 K
Author
Mann, L.D. ; Blair, D.G. ; Wellington, K.J.
Author_Institution
University of Western Australia, Department of Physics, Perth, Australia
Volume
22
Issue
20
fYear
1986
Firstpage
1037
Lastpage
1038
Abstract
We report measurements of the noise temperature of small-signal, low-noise X-band GaAs MESFET amplifiers from room temperature down to 2 K, at offset frequencies of several hundred hertz from the carrier and for input carrier powers from -40 to -20dBm. We observe a dramatic increase in the level of flicker noise as these devices are cooled to liquid helium temperatures, in marked contrast to the normally observed decrease in noise temperature of an unsaturated GaAs MESFET amplifier as it is cooled.
Keywords
III-V semiconductors; Schottky gate field effect transistors; cryogenics; gallium arsenide; microwave amplifiers; random noise; solid-state microwave circuits; 300K to 2K; GaAs; III-V semiconductors; MESFET; X-band amplifiers; cryogenic type; flicker noise; liquid helium temperatures; noise temperature; small-signal operation; solid-state microwave circuits; temperature range;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860711
Filename
4256922
Link To Document