Title :
DC to 2.5 Gb/s*4 p-i-n/HBT optical receiver array with low crosstalk
Author :
Govindarajan, M. ; Siala, S. ; Nottenburg, R.N.
Author_Institution :
Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA
Abstract :
A multichannel optical receiver with an In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector array and a monolithic transimpedance amplifier array fabricated in AlGaAs/GaAs HBT (heterojunction bipolar transistor) technology were demonstrated. Both flip-chip rear-illuminated and wire-bonded front-illuminated detector configurations were implemented. The transimpedance was 65 dB Omega , and the 3-dB bandwidth was measured to be 2.3 GHz. By using series feedback, the transimpedance gain of each cell was matched to within 0.5 dB, and the entire array operated from a single 5-V supply. A low interchannel crosstalk of less than -40 dB was measured up to a data rate of 2 Gb/s.<>
Keywords :
III-V semiconductors; bipolar integrated circuits; crosstalk; feedback; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 2.3 GHz; 2.5 Gbit/s; AlGaAs-GaAs; HBT; In/sub 0.53/Ga/sub 0.47/As; flip-chip rear-illuminated; heterojunction bipolar transistor; low crosstalk; low interchannel crosstalk; monolithic transimpedance amplifier array; multichannel optical receiver; p-i-n photodetector array; p-i-n/HBT optical receiver array; series feedback; transimpedance; transimpedance gain; wire-bonded front-illuminated detector; Bandwidth; Detectors; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical arrays; Optical receivers; PIN photodiodes; Photodetectors; Semiconductor optical amplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
