Title :
High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy
Author :
Yang, Long ; Sudbo, Aasmund S. ; Logan, Ralph A. ; Tanbun-Ek, Tawee ; Tsang, W.T.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
An InGaAs metal-semiconductor-metal (MSM) photodetector with an Fe-doped InP Schottky barrier enhancement layer is described. With 5-V bias, the detector has negligible low-frequency gain, a low dark current of 200 nA, a responsivity of 0.3 A/W, and an impulse response with a 1/e fall time of 65 ps, corresponding to a 3 dB bandwidth of 2.5 GHz. The device layer structure is a very attractive candidate for integration with high-performance InGaAs/InP FETs.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; iron; metal-semiconductor-metal structures; photodetectors; semiconductor growth; vapour phase epitaxial growth; 2.5 GHz; 200 nA; 65 ps; FET integration; InP:Fe-InGaAs; Schottky barrier enhancement layer; bandwidth; dark current; fall time; impulse response; layer structure; metal/semiconductor/metal photodetectors; metalorganic vapor phase epitaxy; responsivity; Dark current; Detectors; Electrodes; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Photodetectors; Schottky barriers; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
