Title :
Tunneling in the metal-insulator-semiconductor structure—I. Silicon-silicon dioxide, II. Thin film Al Al2O3-CdS and Al-Al2O3-CdSe
Author :
Shewchun, J. ; Waxman, A.
Author_Institution :
RCA Laboratories
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1966.15813
