• DocumentCode
    1027184
  • Title

    High-performance InGaAsP/InP 1.3 ¿m laser structures with both facets etched

  • Author

    Saito, Hiroshi ; Noguchi, Y. ; Nagai, Hiroto

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
  • Volume
    22
  • Issue
    22
  • fYear
    1986
  • Firstpage
    1157
  • Lastpage
    1158
  • Abstract
    InGaAsP/InP laser structures with both facets etched are successfully fabricated by angled reactive ion etching (RIE) utilising a TiO2 mask and Cl2-Ar gas. Typical CW threshold current ranges from 20 to 30 mA at 25°C, and light output power from one facet exceeds 25 mW. Results of the aging test at 50°C and 100 mA show no serious degradation for 3200 h.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 micron; 100 mA; 20 to 30 mA; 25 degC; 25 mW; 50 degC; CW threshold current; Cl2-Ar; InGaAsP-InP laser structures; TiO2 mask; aging test; etched facets; high-performance-laser structures; light output power; reactive ion etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860792
  • Filename
    4257008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027184