DocumentCode :
1027184
Title :
High-performance InGaAsP/InP 1.3 ¿m laser structures with both facets etched
Author :
Saito, Hiroshi ; Noguchi, Y. ; Nagai, Hiroto
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Volume :
22
Issue :
22
fYear :
1986
Firstpage :
1157
Lastpage :
1158
Abstract :
InGaAsP/InP laser structures with both facets etched are successfully fabricated by angled reactive ion etching (RIE) utilising a TiO2 mask and Cl2-Ar gas. Typical CW threshold current ranges from 20 to 30 mA at 25°C, and light output power from one facet exceeds 25 mW. Results of the aging test at 50°C and 100 mA show no serious degradation for 3200 h.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 micron; 100 mA; 20 to 30 mA; 25 degC; 25 mW; 50 degC; CW threshold current; Cl2-Ar; InGaAsP-InP laser structures; TiO2 mask; aging test; etched facets; high-performance-laser structures; light output power; reactive ion etching;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860792
Filename :
4257008
Link To Document :
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