DocumentCode
10274
Title
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths
Author
Youngrak Park ; Jung-Jin Kim ; Woojin Chang ; Hyun-Gyu Jang ; Jeho Na ; Hyunsoo Lee ; Chi-Hoon Jun ; Ho-Young Cha ; Jae Kyoung Mun ; Sang Choon Ko ; Eun Soo Nam
Author_Institution
Electron. & Telecommun. Res. Inst., GaN Power Electron. Res. Sect., Daejeon, South Korea
Volume
50
Issue
16
fYear
2014
fDate
July 31 2014
Firstpage
1165
Lastpage
1167
Abstract
A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.
Keywords
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; elemental semiconductors; gallium compounds; silicon; wide band gap semiconductors; AlGaN-GaN; Schottky barrier diode; Si; low onset voltage; nonrecessed diode; reverse leakage current; size 14 mm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.1747
Filename
6870615
Link To Document