• DocumentCode
    1027401
  • Title

    MOVPE InGaAs/InP grown directly on GaAs substrates

  • Author

    Dentai, A.G. ; Joyner, Charles H. ; Tell, B. ; Zyskind, J.L. ; Sulhoff, J.W. ; Ferguson, J.F. ; Centanni, J.C. ; Chu, S.N.G. ; Cheng, C.L.

  • Author_Institution
    AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    22
  • Issue
    22
  • fYear
    1986
  • Firstpage
    1186
  • Lastpage
    1188
  • Abstract
    We have demonstrated the feasibility of growth of InP/InGaAs structures directly on GaAs using atmospheric pressure metal organic vapour phase epitaxy. Growth conditions and the equipment used are described along with some preliminary measurements on the GaAs/InP/InGaAs wafers. P-N junctions were formed in these materials to evaluate diode characteristics.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; GaAs substrates; GaAs-InP-InGaAs; III-V semiconductor; MOVPE; VPE; atmospheric pressure; direct growth; metal organic vapour phase epitaxy; p-n junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860813
  • Filename
    4257030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027401