Title :
MOVPE InGaAs/InP grown directly on GaAs substrates
Author :
Dentai, A.G. ; Joyner, Charles H. ; Tell, B. ; Zyskind, J.L. ; Sulhoff, J.W. ; Ferguson, J.F. ; Centanni, J.C. ; Chu, S.N.G. ; Cheng, C.L.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
We have demonstrated the feasibility of growth of InP/InGaAs structures directly on GaAs using atmospheric pressure metal organic vapour phase epitaxy. Growth conditions and the equipment used are described along with some preliminary measurements on the GaAs/InP/InGaAs wafers. P-N junctions were formed in these materials to evaluate diode characteristics.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; GaAs substrates; GaAs-InP-InGaAs; III-V semiconductor; MOVPE; VPE; atmospheric pressure; direct growth; metal organic vapour phase epitaxy; p-n junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860813
