Title :
A “Probe-Lift” MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction
Author :
Marinella, Matthew J. ; Schroder, Dieter K. ; Chung, Gilyong Y. ; Loboda, Mark J. ; Isaacs-Smith, Tamara ; Williams, John R.
Author_Institution :
Arizona State Univ., Tempe
Abstract :
A new method for precisely measuring low gate oxide currents by measuring the charge leaking through the oxide in a pulsed metal oxide semiconductor capacitor (MOS-C) is presented. Using basic equipment, it is possible to measure currents less than 10 fA/cm2 . The relevant theory is developed to use these capacitance-time data to extract an approximate leakage current and the effect on the extracted generation lifetime. The technique is simple and requires the same equipment used for pulsed MOS-C generation lifetime measurements. Experimental results are presented, which are consistent with theory.
Keywords :
MOS capacitors; electric current measurement; leakage currents; semiconductor device measurement; semiconductor device reliability; MOS-C; MOS-capacitor technique; generation lifetime extraction; leakage currents; pulsed metal oxide semiconductor capacitor; Capacitance; Charge measurement; Current measurement; Data mining; Leakage current; Lifetime estimation; MOS capacitors; Nonvolatile memory; Pulse generation; Pulse measurements; Leakage currents; MOS capacitors; semiconductor device measurements; semiconductor device reliability; silicon compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.912377
