Title :
Planar surface buried-heterostructure InGaAsP/InP lasers with hydride VPE-grown Fe-doped highly resistive current-blocking layers
Author :
Sugou, S. ; Kato, Yu ; Nishimoto, H. ; Kasahara, K.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
The fabrication and lasing characteristics for planar surface buried-heterostructure InGaAsP/InP lasers with highly resistive current-blocking layers are reported. Embedding growth was successfully performed by Fe-doping hydride VPE. Single transverse mode operation has been realised in lasers with a narrow active region, without any nonradiative recombination increase, due to an Fe-associated deep level. High-frequency response up to 10GHz was also demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 10 GHz; HF response; InGaAsPInP; InP:Fe highly resistive current blocking layers; deep level; embedding growth; fabrication; hydride VPE; lasing characteristics; narrow active region; planar surface BH laser; semiconductor lasers; single transverse mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860832
