Production of silicon oxides from glow discharge decomposition of silane and nitric oxide

Films of silicon oxide have been produced by PECVD from NO + SiH4 mixtures. The results indicate that the film properties are less dependent on deposition conditions than when the more usual N2O + SiH4 mixtures are used. The films produced have a high resistivity and good interfacial properties with silicon, but are fairly porous with a relatively high etch rate in p-etch.