X-band MMIC amplifier with pulse-doped GaAs MESFET´s

Author

Shiga, Nobuo ; Nakajima, Shigeru ; Otobe, Kenji ; Sekiguchi, Takeshi ; Kuwata, Nobuhiro ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki

Author_Institution

Sumimoto Electr. Ind. Ltd., Yokohama, Japan

Volume

39

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1987

Lastpage

1994

Abstract

The design and test of an X-band monolithic four-stage low-noise amplifier (LNA) with 0.5 μm-gate pulse-doped GaAs MESFETs for application in a direct broadcast satellite (DBS) converter is presented. The key feature of the research is a detailed demonstration of the advantages of using series feedback with experiments and simulations. This LNA shows an excellent input VSWR match under 1.4 as well as a noise figure of 1.67 dB and a gain of 24 dB at 12 GHz. The noise figure, the gain and VSWRs exhibit very little bias current dependence due to the exceptional features of the pulse-doped structure FETs and the optimized circuit design. Insensitivity to bias current implies performance stability in the face of process fluctuations. Thus, the yield of chips with noise figures of less than 2.0 dB is as high as 62.5%, and the variations of gain and VSWR are highly uniform as well

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; feedback; field effect integrated circuits; gallium arsenide; microwave amplifiers; 0.5 micron; 1.67 dB; 12 GHz; 24 dB; DBS convertor; GaAs; MESFETs; MMIC amplifier; SHF; X-band; direct broadcast satellite; four stage LNA; low-noise amplifier; optimized circuit design; performance stability; pulse-doped structure FETs; series feedback; submicron gate; Feedback; Gain; Gallium arsenide; Impedance matching; Low-noise amplifiers; MESFETs; Noise figure; Pulse amplifiers; Satellite broadcasting; Testing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.106537

Filename

106537