Dual gate with replicate and pseudo-swap functions using double conductor layers for ion-implanted devices

A new functional gate which has the dual function of the block replicate and pseudo-swap(annihilate and replicate-in) gate for the high density ion-implanted devices has been proposed and characterized. The dual gate is composed of ion-implanted tracks and two hair-pin conductors in two layers; one conductor to stretch bubbles and the other to annihilate and cut them. Both functions of the dual gate were realized with 0.9-μm-bubbles in the temperature range of -25°C to +90°C. The minimum rotating field HRof 35 Oe and the bias field margin of 11.8 % (47 Oe) with HRof 60 Oe at 55°C were obtained. The dual gate enables the 16 to 64Mb bubble memory devices with compatibility to the BMC (Bubble Memory Controller) of conventional 4Mb Permalloy devices.