S-parameter measurements and microwave applications of superconducting flux flow transistors

Author

Martens, J.S. ; Hietala, Vincent M. ; Zipperian, Thomas E. ; Ginley, D.S. ; Tigges, Chris P. ; Phillips, Julia M.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

39

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2018

Lastpage

2025

Abstract

Microwave two-port S-parameter measurements and modeling of superconducting flux flow transistors are presented. The transistors, based on the magnetic control of flux flow in any array of high temperature superconducting weak links, exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive while the output impedance is both resistive and inductive. It is shown that the characteristics of these devices are useful in numerous applications including matched amplifiers, phase shifters and active impedance convertors

Keywords

S-parameters; equivalent circuits; high-temperature superconductors; modelling; solid-state microwave devices; superconducting junction devices; transistors; 10 to 30 ps; 20 dB; 7 to 10 GHz; 77 K; S-parameter measurements; active impedance convertors; flux flow; high speed operation; high temperature superconducting weak links; magnetic control; matched amplifiers; microwave applications; microwave frequencies; microwave two-port measurements; modeling; phase shifters; power gain; superconducting film; superconducting flux flow transistors; Fluid flow measurement; High temperature superconductors; Impedance; Magnetic devices; Magnetic flux; Microwave measurements; Microwave transistors; Scattering parameters; Superconducting magnets; Superconducting microwave devices;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.106541

Filename

106541