DocumentCode
1028663
Title
Characterisation of n-channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidation
Author
Crisman, E.E. ; Lee, J.I. ; Stiles, P.J. ; Gregory, Otto J.
Author_Institution
Brown University, Department of Physics, Providence, USA
Volume
23
Issue
1
fYear
1987
Firstpage
8
Abstract
N-channel Ge MOSFETs are fabricated with the use of a double-layer gate oxide consisting of electron beam evaporated SiO2 over a native GeO2 oxide, formed by highpressure thermal oxidation. Interface properties of the MOS structure, determined by capacitance/voltage and mobility measurements, are shown to be suitable for FET devices.
Keywords
elemental semiconductors; germanium; insulated gate field effect transistors; oxidation; Ge-GeO2-SiO2; MOS structure; MOSFET; N-channel; capacitance/voltage measurements; double-layer gate oxide; electron beam evaporation; gate insulator; high-pressure thermal oxidation; interface properties; mobility measurements; native oxides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870006
Filename
4257180
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