Title :
Resonant tunnelling electron spectroscopy
Author :
Capasso, Federico ; Sen, Satyaki ; Cho, Andrew Y. ; Hutchinson, A.L.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
The energy distribution of hot electrons quasiballistically injected in p+ GaAs has been probed directly using the tunnelling resonances of a double barrier in a specially designed two-terminal heterojunction device. The photocurrent/voltage characteristics give direct information on the hot electron spectrum, without requiring derivative techniques.
Keywords :
III-V semiconductors; aluminium compounds; electron spectroscopy; gallium arsenide; hot carriers; p-n heterojunctions; tunnelling; GaAs; GaAs-AlGaAs; III-V semiconductor; double barrier; energy distribution; hot electrons; p+ type; photocurrent/voltage characteristics; quasiballistic injection; two-terminal heterojunction device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870021
