DocumentCode
1028845
Title
Slope angle influence on silicon doping in AlGaAs/GaAs MBE-grown on stepped surface of (100) GaAs substrate
Author
Nobuhara, H. ; Wada, O. ; Fujii, Teruya
Author_Institution
Fujitsu Laboratories Ltd., Atsugi, Japan
Volume
23
Issue
1
fYear
1987
Firstpage
35
Lastpage
36
Abstract
Formation of a series of lateral p-n junctions has been observed in molecular-beam-epitaxial Si-doped AlGaAs/GaAs grown on a graded-step surface of a (100) GaAs substrate. The lateral p-n junction has been found to be formed in a region where a slope angle ¿ of the graded-step surface changes gradually; the conductivity is n-type for 0° < ¿ < 21° but it converts to p-type for ¿ > 31°. A critical angle in the conductivity reversal has been first observed on a single substrate.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; AlGaAs-GaAs:Si; GaAs; MBE; conductivity reversal; conductivity type; critical angle; graded-step surface; semiconductors; series of lateral p- n junctions; slope angle influence; stepped surface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870026
Filename
4257226
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