DocumentCode :
1028980
Title :
Modeling the optical switching of MESFET´s considering the external and internal photovoltaic effects
Author :
Madjar, Asher ; Paolella, Arthur ; Herczfeld, Peter R.
Author_Institution :
Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
42
Issue :
1
fYear :
1994
fDate :
1/1/1994 12:00:00 AM
Firstpage :
62
Lastpage :
67
Abstract :
One of the aspects of the merging of microwave and optical technologies is the use of optical signals to switch electronic circuits in general and microwave circuits in particular (including MMIC). During the last decade, the feasibility of optical switching of MMIC´s has been demonstrated. This paper presents a novel model for the optical switching of the MESFET, which is the building block of MMIC´s. The model predicts the optical switching performance as a function of the optical signal parameters, the bias level, and the device physics and geometry. The results and conclusions from the theory are verified by measurements. The new model can serve as a design tool for designing an optimal MESFET for optical switching purposes
Keywords :
MMIC; Schottky gate field effect transistors; equivalent circuits; photovoltaic effects; semiconductor device models; semiconductor switches; solid-state microwave devices; switching; GaAs; MESFET; MMIC; bias level; design tool; device geometry; device physics; external photovoltaic effects; internal photovoltaic effects; microwave circuits; model; optical signal parameters; optical switching; Electronic circuits; MESFETs; MMICs; Merging; Microwave circuits; Microwave technology; Optical design; Optical devices; Optical switches; Switching circuits;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.265529
Filename :
265529
Link To Document :
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