DocumentCode
1029033
Title
Failure modes in silicon avalanche transit-time microwave devices
Author
Schenck, J.F. ; Midford, T.A.
Volume
14
Issue
9
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
619
Lastpage
620
Abstract
A type of avalanche diode has been subjected to accelerated life test and to failure analysis. The primary failure mechanism is believed to be a form of second breakdown; no significant progressive degradation was observed.
Keywords
Copper; Degradation; Diodes; Electric breakdown; Electromagnetic heating; Failure analysis; Life testing; Microwave devices; Partial response channels; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1967.16019
Filename
1474742
Link To Document