• DocumentCode
    1029043
  • Title

    Self-aligned AlGaAs/GaAs HBT with InGaAs emitter cap layer

  • Author

    Nagata, Kazuyuki ; Nakajima, O. ; Nittono, T. ; Ito, H. ; Ishibashi, Takayuki

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    A new self-aligned AlGaAs/GaAs HBT with an InGaAs emitter cap layer is presented. This HBT has nonalloyed ohmic contacts to the emitter and base that are formed simultaneously and in a self-aligned manner. The low emitter contact resistance of 1.4×10-7 ¿cm2 and the high transconductance per unit area of 3.3 mS/¿m2 demonstrate the effectiveness of this structure.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; ohmic contacts; semiconductor technology; AlGaAs-GaAs; DC characteristics; InGaAs emitter cap layer; contact resistance; heterojunction bipolar transistors; nonalloyed ohmic contacts; self-aligned AlGaAs/GaAs HBT; transconductance per unit area;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870046
  • Filename
    4257277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029043