DocumentCode
1029050
Title
Effects of uniaxial stress on silicon avalanche transit-time oscillators
Author
Midford, T.A. ; Bowers, H.C.
Volume
14
Issue
9
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
620
Lastpage
622
Abstract
Experiments were performed to determine the effects of uniaxial compressive stress on the threshold current and frequency of silicon microwave avalanche diode oscillators. The presence of gold recombination-generation centers was found to have little influence on the stress sensitivity of these devices. The experimental results are qualitatively related to small-signal oscillator theory.
Keywords
Compressive stress; Diodes; Etching; Failure analysis; Frequency; Gold; Microwave oscillators; Occupational stress; Silicon; Threshold current;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1967.16020
Filename
1474743
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