DocumentCode
1029124
Title
A floating gate and its application to memory devices
Author
Sze, Simon M.
Volume
14
Issue
9
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
629
Lastpage
629
Keywords
Charge carrier processes; Diodes; Electron traps; Epitaxial layers; Gallium arsenide; Gunn devices; Laboratories; Microwave oscillators; Nonvolatile memory; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1967.16028
Filename
1474751
Link To Document