Title :
Avalanche effects in Gunn diodes
Author :
Owens, J. ; Kino, G.S.
fDate :
9/1/1967 12:00:00 AM
Keywords :
Anodes; Charge carrier processes; Diodes; Electron traps; Frequency; Gallium arsenide; Gunn devices; Ionization; Length measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16030
