Title :
Application of AlGaAs/GaAs HBTs for wideband direct-coupled amplifiers
Author :
Yamauchi, Yuji ; Ishibashi, Takayuki
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
An AlGaAs/GaAs HBT direct-coupled amplifier has been designed and its characteristics described for the first time. The amplifier consists of two HBTs and three resistors without level-shift diodes. A superior amplifier performance of 11 dB gain with a 4 GHz bandwidth was obtained.
Keywords :
DC amplifiers; III-V semiconductors; aluminium compounds; bipolar transistor circuits; gallium arsenide; wideband amplifiers; 0.1 to 18 GHz; 11 dB; 4 GHz; AlGaAs-GaAs; HBT direct-coupled amplifier; amplifier performance; wideband direct-coupled amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870110
