• DocumentCode
    1030278
  • Title

    Complementary silicon MESFET technology

  • Author

    Bohlin, K.E. ; Tove, P.A. ; Magnusson, U. ; Tiren, J.

  • Author_Institution
    Institute of Technology, University of Uppsala, Electronics Department, Uppsala, Sweden
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    Prototype complementary silicon MESFET inverters and rign oscillators were fabricated. N-channel transistors have platinum gates and erbium source and drain contacts, while for the p-channel devices the roles of the two metals are reversed. Silicon-on-sapphire substrates were used to provide good device isolation and realisation of normally-off operation.
  • Keywords
    Schottky gate field effect transistors; elemental semiconductors; field effect integrated circuits; integrated circuit technology; silicon; Er source contacts; MESFET technology; Pt gates; SOS substrates; Si-Al2O3; complementary type; device isolation; drain contacts; elemental semiconductors; inverters; monolithic IC; ring oscillators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870144
  • Filename
    4257470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030278