Title :
Resonant tunnelling gate field-effect transistor
Author :
Capasso, Federico ; Sen, Satyaki ; Beltram, F. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
A new negative differential resistance field-effect transistor concept, based on resonant tunnelling, is demonstrated. The gate of this novel device consists of an AlAs/GaAs double barrier. The drain current against drain and gate voltages exhibit a peak due to the quenching of the resonant tunneling gate current. Thus, in addition to negative conductance, this structure exhibits negative transconductance, a uniquie feature in an n-channel device.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor junctions; tunnelling; AlAs-GaAs double barrier gate; current voltage curves; drain current; n-channel device; negative differential resistance; negative transconductance; resonant tunnelling gate FET; resonant tunnelling gate current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870158
