Title :
Dynamic spectral linewidth in InGaAsP multiquantum-well lasers grown by liquid-phase epitaxy
Author :
Sasai, Y. ; Ohya, J. ; Ogura, M. ; Kajiwara, Toshiya
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Opto-Electronics Laboratory, Semiconductor Research Center, Moriguchi, Japan
Abstract :
Dynamic spectral linewidths in InGaAsP multiquantum-well buried-heterostructure (BH) lasers grown by liquid-phase epitaxy (LPE) have been investigates. The results showed that the linewidths in the MQW lasers were smaller than in conventional DFB-BH lasers and that they decreased as the well width became smaller.
Keywords :
III-V semiconductors; crystal growth from melt; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical communication equipment; semiconductor junction lasers; BH lasers; InGaAsP; LDE; MQW lasers; dynamic spectral linewidth; linewidths; semiconductors; well width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870164
