• DocumentCode
    1030834
  • Title

    Low-leakage InGaAs photodiodes grown on gaAs substrates using a graded strained-layer superlattice

  • Author

    Hodson, P.D. ; Wallis, R.H. ; Davies, J.I.

  • Author_Institution
    Plessey Research (Caswell) Limited, Towcester, UK
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • Firstpage
    273
  • Lastpage
    275
  • Abstract
    InxGa1¿xAs layers with In concentrations up to 35% have been grown on GaAs substrates by MOCVD using a GaAs/InxGa1¿xAs superlattice with graded layer thicknesses to accommodate the lattice mismatch. 105 ¿m-diameter PIN diodes fabricated from this material have leakage currents below 1 nA at ¿ 10 V, comparable to devices from lattice-matched material on InP substrates.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; leakage currents; photodiodes; semiconductor superlattices; GaAs substrates; GaAs-InxGa1-xAs superlattice; InGaAs photodiodes; MOCVD; PIN diodes; graded strained-layer superlattice; lattice mismatch; leakage currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870199
  • Filename
    4257526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030834