Title :
Low-temperature process for high-mobility polysilicon TFTs
Author :
Loisel, B. ; Chouan, Y. ; Pedrono, N. ; Joubert, P.
Author_Institution :
Centre National d´´Etudes des Télécommunications, LAB-ROC/TIC, Lannion, France
Abstract :
Thin-film transistors (TFTs) have been realised by a low-temperature (T¿ 580°C), short process, on polycrystalline silicon thin films deposited by PECVD on glass. Field-effect mobility up to 35cm2V-1s-1 has been measured on such devices.
Keywords :
chemical vapour deposition; elemental semiconductors; flat panel displays; semiconductor growth; silicon; thin film transistors; 580 C; PECVD; field effect mobility; flat panel display applications; high mobility poly-Si; low temperature process; polycrystalline Si; semiconductors; thin film transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870209
