DocumentCode :
1031238
Title :
Characteristics and theory of a silicon carbide p+-i-n photodiode
Author :
Chang, H.C. ; Campbell, Robert B.
Volume :
15
Issue :
6
fYear :
1968
fDate :
6/1/1968 12:00:00 AM
Firstpage :
418
Lastpage :
418
Keywords :
Breakdown voltage; Capacitance; P-i-n diodes; P-n junctions; Photodiodes; Photovoltaic systems; Silicon carbide; Solar power generation; Temperature dependence; Wavelength measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16250
Filename :
1475152
Link To Document :
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