Title :
Optoelectronic time division multiplexing
Author :
Albares, D.J. ; Garcia, Gonzalo Andres ; Chang, C.T. ; Reedy, R.E.
Author_Institution :
Naval Ocean Systems Center, San Diego, USA
Abstract :
The concept of using optoelectronic (photoconductive) switches as the sampling element in time division multiplexing is introduced in the context of VLSI off-chip data transmission. A 4:1 multiplexer was fabricated in Cr : GaAs, activated by a GaAs laser via optical fibre delay lines and operated at 2.5 Gbit/s.
Keywords :
III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; photoconducting devices; semiconductor switches; time division multiplexing; 2.5 Gbit/s; 4:1 multiplexer; GaAs:Cr; VLSI off-chip data transmission; optical fibre delay lines; optoelectronic TDM; photoconductive switches; sampling element; semiconductor; time division multiplexing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870242
