DocumentCode
1031294
Title
Gain, polarisation sensitivity and saturation power of 1.5 μm near-travelling-wave semiconductor laser amplifier
Author
Simon, J.C. ; Landousies, B. ; Bossis, Y. ; Doussiere, P. ; Fernier, B. ; Padioleau, C.
Author_Institution
CNET, LAB/ROC/FOG, Lannion, France
Volume
23
Issue
7
fYear
1987
Firstpage
332
Lastpage
334
Abstract
Gain, saturation and polarisation characteristics of a near-travelling-wave 1.5,μm BH semiconductor laser amplifier are reported. An internal cavity peak TE gain of 26.8 ± 0.5 dB with a gain ripple of 2.9 ± 0.1 dB, and TE saturation output power of 3.5±1.5dB at 22.2±0.5dB small-signal gain have been achieved.
Keywords
semiconductor junction lasers; 1.5 micron; 26.5 dB; BH semiconductor laser amplifier; gain characteristics; gain ripple; internal cavity peak TE gain; near-travelling-wave semiconductor laser amplifier; polarisation characteristics; polarisation sensitivity; saturation characteristics; saturation output power; saturation power; small-signal gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870246
Filename
4257574
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