• DocumentCode
    1031671
  • Title

    Closed-form physical model for VLSI bipolar devices considering energy transport

  • Author

    Kuo, J.B. ; Huang, H.J. ; Lu, T.C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • Volume
    30
  • Issue
    3
  • fYear
    1994
  • fDate
    2/3/1994 12:00:00 AM
  • Firstpage
    268
  • Lastpage
    269
  • Abstract
    A closed-form physical model is reported for VLSI bipolar devices considering energy transport. Based on the model, for a base width of 810 Å, the bipolar device, biased at Vcb=2 V, has a peak electron temperature of over 700 K, which results in a 5% reduction in the collector current
  • Keywords
    VLSI; bipolar integrated circuits; bipolar transistors; semiconductor device models; 2 V; 700 K; 810 A; VLSI bipolar devices; closed-form physical model; collector current; energy transport; peak electron temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940125
  • Filename
    267198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031671