• DocumentCode
    1031735
  • Title

    Perpendicular magnetic anisotropy on sputtered FeTi films

  • Author

    Tamai, Hideki ; Tagami, Katsumichi

  • Author_Institution
    Microelectronics Research Labs., NEC Corporation, Kawasaki, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    2737
  • Lastpage
    2739
  • Abstract
    Magnetic properties and crystalline structures for sputtered FeTi films (0-40 at% Ti in composition), have been examined. The film structures were divided into three regions, bcc phase, transition region from bee to amorphous phase, and amorphous phase. In the transition region (15-18 at% Ti) from bcc to amorphous phase, FeTi films with perpendicular magnetic anisotropy were found. Saturation magnetization, magnetic anisotropy field, and perpendicular coercivity for a typical FeTi film (16.8 at% Ti) prepared in the transition region were 300 emu/cc, 2.7 kOe, and 710 Oe, respectively. Crystalline microstructures for FeTi films with perpendicular magnetic anisotropy are composed of amorphous phase and isolated pillar or pin-like crystalline grains (200-500 Å) with bcc phase surrounded by the amorphous phase. Therefore, the origin of perpendicular magnetic anisotropy on FeTi films is mainly attributed to the grains shape anisotropy.
  • Keywords
    Magnetic films/devices; Perpendicular magnetic anisotropy; Amorphous materials; Coercive force; Crystal microstructure; Crystallization; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; Saturation magnetization; Shape;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065709
  • Filename
    1065709