DocumentCode
1031735
Title
Perpendicular magnetic anisotropy on sputtered FeTi films
Author
Tamai, Hideki ; Tagami, Katsumichi
Author_Institution
Microelectronics Research Labs., NEC Corporation, Kawasaki, Japan
Volume
23
Issue
5
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
2737
Lastpage
2739
Abstract
Magnetic properties and crystalline structures for sputtered FeTi films (0-40 at% Ti in composition), have been examined. The film structures were divided into three regions, bcc phase, transition region from bee to amorphous phase, and amorphous phase. In the transition region (15-18 at% Ti) from bcc to amorphous phase, FeTi films with perpendicular magnetic anisotropy were found. Saturation magnetization, magnetic anisotropy field, and perpendicular coercivity for a typical FeTi film (16.8 at% Ti) prepared in the transition region were 300 emu/cc, 2.7 kOe, and 710 Oe, respectively. Crystalline microstructures for FeTi films with perpendicular magnetic anisotropy are composed of amorphous phase and isolated pillar or pin-like crystalline grains (200-500 Å) with bcc phase surrounded by the amorphous phase. Therefore, the origin of perpendicular magnetic anisotropy on FeTi films is mainly attributed to the grains shape anisotropy.
Keywords
Magnetic films/devices; Perpendicular magnetic anisotropy; Amorphous materials; Coercive force; Crystal microstructure; Crystallization; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; Saturation magnetization; Shape;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1065709
Filename
1065709
Link To Document