• DocumentCode
    1031863
  • Title

    New interpretation of structure of thermally grown silicon dioxide

  • Author

    Boyd, I.W.

  • Author_Institution
    University College London, Department of Electronic & Electrical Engineering, London, UK
  • Volume
    23
  • Issue
    8
  • fYear
    1987
  • Firstpage
    411
  • Lastpage
    413
  • Abstract
    New evidence suggesting that the structure of thermally grown silicon dioxide films may not be totally amorphous is presented. Mathematical deconvolution of the Si¿O absorption at 1075 cm¿1 consistently reveals two distinct Gaussian lineshapes. Possible sources for these derived peaks are discussed.
  • Keywords
    infrared spectra of inorganic solids; insulating thin films; noncrystalline state structure; oxidation; silicon compounds; spectral line breadth; Gaussian lineshapes; SiO2; derived peaks; thermally grown;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870299
  • Filename
    4257628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031863