• DocumentCode
    1031989
  • Title

    Long-term reliability of strain-compensated InGaAs(P)/InP MQW BH lasers

  • Author

    Perrin, S.D. ; Spurdens, P.C.

  • Volume
    30
  • Issue
    3
  • fYear
    1994
  • fDate
    2/3/1994 12:00:00 AM
  • Firstpage
    227
  • Lastpage
    229
  • Abstract
    The authors have grown wafers with 16 zero-net-strain and conventionally strained In0.68Ga0.32As quantum wells and eight strain-compensated In0.84Ga0.16As 0.68P0.32 quantum wells. Buried heterostructure lasers were fabricated and reliability studies have been carried out. Initial estimates give lifetimes of around 100 years
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; life testing; reliability; semiconductor lasers; 100 yr; In0.68Ga0.32As; In0.84Ga0.16As0.68P0.32 ; InGaAs-InGaAsP-InP; buried heterostructure lasers; lifetimes; long-term reliability; strain-compensated In0.84Ga0.16As0.68 P0.32 quantum wells; strain-compensated InGaAs(P)/InP MQW BH lasers; strained In0.68Ga0.32As quantum wells; wafers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940150
  • Filename
    267224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031989