Title :
High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs)
Author :
Wood, T.H. ; Carr, E.C. ; Burrus, C.A. ; Tucker, Rodney ; Chiu, Tzu-Hsuan ; Tsang, W.-T.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
We observe a large electroabsorption effect in a GaSb/AlGaSb MQW, and use it to make a waveguide modulator with a 10.5 dB on/off ratio and a 12dB insertion loss at a wavelength of 1.55¿m. Our high-speed device has a 3dB rolloff frequency of 3.7 GHz.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium compounds; optical communication equipment; optical modulation; optical waveguide components; semiconductor superlattices; 1.55 micron; 12 dB; 3 dB rolloff frequency; 3.7 GHz; GaSb-AlGaSb; MQW; electroabsorption effect; high-speed device; insertion loss; multiple quantum wells; waveguide optical modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870389
