Title :
Novel process for emitter-base-collector self-aligned heterojunction bipolar transistor using a pattern-inversion method
Author :
Tanaka, Shoji ; Madihian, Mohammad ; Toyoshima, Hisashi ; Hayama, N. ; Honjo, Kazuhiko
Author_Institution :
NEC Corporation, Kawasaki, Japan
Abstract :
A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 × 10¿m2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.
Keywords :
bipolar transistors; semiconductor technology; 1.5 micron; 10 micron; base-emitter-collector self-aligned HBTs; current gain; dry-etching method; heterojunction bipolar transistor; pattern-inversion method; process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870403
