DocumentCode :
1032972
Title :
Effect of facet coatings on far fields of semiconductor lasers
Author :
Ohtoshi, T.
Author_Institution :
Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
Volume :
23
Issue :
11
fYear :
1987
Firstpage :
570
Lastpage :
571
Abstract :
A theoretical expression is derived for the far fields of semiconductor lasers with coated facets. It is shown that the far fields are different for uncoated, antireflection-coated and high-reflection-coated lasers. The correction factor for the far fields is shown to depend on the transmission coefficient of the facets.
Keywords :
antireflection coatings; coatings; laser cavity resonators; semiconductor junction lasers; antireflection coated lasers; coated facets; correction factor; facet coatings; far fields; high-reflection-coated lasers; semiconductor lasers; transmission coefficient; uncoated lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870408
Filename :
4257740
Link To Document :
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