• DocumentCode
    1032985
  • Title

    Air-gap isolated microcircuits—Beam-lead devices

  • Author

    Rosvold, Warren C. ; Legat, Hans W. ; Holden, R.L. ; Holden, R.L.

  • Author_Institution
    Raytheon Company, Mountain View, Calif.
  • Volume
    15
  • Issue
    9
  • fYear
    1968
  • fDate
    9/1/1968 12:00:00 AM
  • Firstpage
    640
  • Lastpage
    644
  • Abstract
    The comparison of air-gap isolated integrated circuits with conventionally fabricated circuits shows the advantage of the "beam-lead concept." Utilizing the anisotropic etching properties of single crystalline silicon in the
  • Keywords
    Air gaps; Anisotropic magnetoresistance; Bonding; Chemical vapor deposition; Crystallization; Etching; Fabrication; Integrated circuit interconnections; Silicon; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16421
  • Filename
    1475323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032985