• DocumentCode
    1033099
  • Title

    Sensitivity of GaAs analogue integrated circuit building blocks to the effect of back-gating

  • Author

    Lee, Woo Seung

  • Author_Institution
    STC Technology Limited, Harlow, UK
  • Volume
    23
  • Issue
    11
  • fYear
    1987
  • Firstpage
    587
  • Lastpage
    589
  • Abstract
    The effects of back-gating on two basic GaAs precision analogue circuit building blocks have been established. Owing to internal gain, the stability of the single-stage inverter amplifier was found to be most susceptible to both positive and negative side-contact potentials, and the generation of low-frequency oscillations. The use of negative feedback to improve DC stability was demonstrated. In contrast, the source-follower exhibited relatively better stability against back-gating.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; linear integrated circuits; DC stability; GaAs integrated circuits; back-gating; generation of low-frequency oscillations; internal gain; negative feedback; precision analogue circuit building blocks; side-contact potentials; single-stage inverter amplifier; source-follower;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870422
  • Filename
    4257754