DocumentCode
1033099
Title
Sensitivity of GaAs analogue integrated circuit building blocks to the effect of back-gating
Author
Lee, Woo Seung
Author_Institution
STC Technology Limited, Harlow, UK
Volume
23
Issue
11
fYear
1987
Firstpage
587
Lastpage
589
Abstract
The effects of back-gating on two basic GaAs precision analogue circuit building blocks have been established. Owing to internal gain, the stability of the single-stage inverter amplifier was found to be most susceptible to both positive and negative side-contact potentials, and the generation of low-frequency oscillations. The use of negative feedback to improve DC stability was demonstrated. In contrast, the source-follower exhibited relatively better stability against back-gating.
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; linear integrated circuits; DC stability; GaAs integrated circuits; back-gating; generation of low-frequency oscillations; internal gain; negative feedback; precision analogue circuit building blocks; side-contact potentials; single-stage inverter amplifier; source-follower;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870422
Filename
4257754
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