DocumentCode :
1034082
Title :
InGaAs-AlAsSb quantum cascade structures emitting at 3.1 μm
Author :
Revin, D.G. ; Steer, M.J. ; Wilson, L.R. ; Airey, R.J. ; Cockburn, J.W. ; Zibik, E.A. ; Green, R.P.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Volume :
40
Issue :
14
fYear :
2004
fDate :
7/8/2004 12:00:00 AM
Firstpage :
874
Lastpage :
875
Abstract :
A report is made of the pulsed operation of In0.53Ga0.47As-AlAs0.56Sb0.44 quantum cascade structures on an InP substrate. The very large conduction band offset (∼1.6 eV) of this material system made it possible to observe electroluminescence at λ∼3.1 μm, the shortest emission wavelength yet observed for any intersubband device.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; electroluminescence; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; 3.1 micron; In0.53Ga0.47As-AlAs0.56Sb0.44; InGaAs-AlAsSb quantum cascade structures; InP; InP substrate; conduction band offset; electroluminescence; emission wavelength; pulsed mode operation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045186
Filename :
1315503
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1034082
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