• DocumentCode
    1034082
  • Title

    InGaAs-AlAsSb quantum cascade structures emitting at 3.1 μm

  • Author

    Revin, D.G. ; Steer, M.J. ; Wilson, L.R. ; Airey, R.J. ; Cockburn, J.W. ; Zibik, E.A. ; Green, R.P.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Sheffield, UK
  • Volume
    40
  • Issue
    14
  • fYear
    2004
  • fDate
    7/8/2004 12:00:00 AM
  • Firstpage
    874
  • Lastpage
    875
  • Abstract
    A report is made of the pulsed operation of In0.53Ga0.47As-AlAs0.56Sb0.44 quantum cascade structures on an InP substrate. The very large conduction band offset (∼1.6 eV) of this material system made it possible to observe electroluminescence at λ∼3.1 μm, the shortest emission wavelength yet observed for any intersubband device.
  • Keywords
    III-V semiconductors; aluminium compounds; conduction bands; electroluminescence; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; 3.1 micron; In0.53Ga0.47As-AlAs0.56Sb0.44; InGaAs-AlAsSb quantum cascade structures; InP; InP substrate; conduction band offset; electroluminescence; emission wavelength; pulsed mode operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045186
  • Filename
    1315503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034082